Functional Overview
The FM25C160B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

FEATUREs
■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8
    ❐ High-endurance 10 trillion (1013) read/writes
    ❐ 121-year data retention (See the Data Retention and Endurance table)
    ❐ NoDelay™ writes
    ❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
    ❐ Up to 15 MHz frequency
    ❐ Direct hardware replacement for serial flash and EEPROM
    ❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ Sophisticated write protection scheme
    ❐ Hardware protection using the Write Protect (WP) pin
    ❐ Software protection using Write Disable instruction
    ❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
    ❐ 300 μA active current at 1 MHz
    ❐ 10 μA (typ) standby current at +85 °C
■ Voltage operation: VDD = 4.5 V to 5.5 V
■ Automotive-E temperature: –40 °C to +125 °C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant