Functional Description
The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

FEATUREs
■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
    ❐ High-endurance 100 trillion (1014) read/writes
    ❐ 151-year data retention (See the Data Retention and Endurance table)
    ❐ NoDelay™ writes
    ❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
    ❐ Up to 40-MHz frequency
    ❐ Direct hardware replacement for serial flash and EEPROM
    ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write-protection scheme
    ❐ Hardware protection using the Write Protect (WP) pin
    ❐ Software protection using Write Disable instruction
    ❐ Software block protection for 1/4, 1/2, or entire array
■ Device ID
    ❐ Manufacturer ID and Product ID
■ Low power consumption
    ❐ 2.5-mA active current at 40 MHz
    ❐ 150-A standby current
    ❐ 8-A sleep mode current
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant