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M6MGB/T166S2BWG image

Número de pieza
M6MGB166S2BWG

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page
30 Pages

File Size
252.3 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit  and DINOR(DIvided bit-line NOR) architecture for the memory cell.
2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T166S2BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .


FEATURES
• Access time                                        
                         Flash Memory           90ns (Max.)
                         SRAM                       85ns (Max.)
• Supply voltage                                Vcc=2.7 ~ 3.6V
• Ambient temperature                     
                          I   version                Ta=-40 ~ 85°C
• Package : 72-pin S-CSP , 0.8mm ball pitch


APPLICATION
   Mobile communication  products

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Número de pieza
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PDF
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16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
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16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
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16,777,216-BIT(1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT(262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
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